Micro Photon Devices offers a comprehensive family of Single Photon Avalanche Diodes (SPADs), ranging from Single Pixel Cilicon and InGaAs detectors to bidimensional array of CMOS detectors.
The use of unique custom silicon technology, specifically designed for the fabrication of the detectors, allow us to build arrays, available upon request, that combine high photon detection efficiency (peak higher than 50% @ wavelength of 550nm) with a low dark count rate (compatible with true single molecule detection) from each pixel. These arrays are usually integrated into a compact module that contains all the electronics needed for a proper operation of the detectors.
In contrast, the use of standard CMOS technology has the advantage of allowing the fabrication of high-density SPAD arrays with complex in-chip electronics (counting and/or timing), although the PDE and DCR are not as good as the one achieved with custom technology. Standard CMOS pixel comprises single-photon avalanche diode detectors, analog front-end and a digital processing electronics. These on-chip integrated devices provide single-photon sensitivity, high electronic noise immunity, and fast readout speed. The imagers we obtain can be operated at frame rates up to about 50.000 frames per second with negligible interframe dead time. They feature high photon-detection efficiency in the visible spectral region, and low dark-counting rates, even at room temperature.
Our photon detection technologies are intended to address customer requiements, beeing them Universities, Research Centres or OEMs willing to develop new cutting-edge application or next-generation products.
We can tailor our product addressing customers application-specific needs. Contact us to learn more.